Emittance Properties of Siliconized Silicon Carbide in the Temperature Range of 1400–2200 K
- 作者: Kostanovskiy A.V.1, Zeodinov M.G.1, Kostanovskaya M.E.1, Pronkin A.A.1
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隶属关系:
- Joint Institute for High Temperatures, Russian Academy of Sciences
- 期: 卷 57, 编号 2 (2019)
- 页面: 272-274
- 栏目: Short Communications
- URL: https://journal-vniispk.ru/0018-151X/article/view/157969
- DOI: https://doi.org/10.1134/S0018151X19020093
- ID: 157969
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作者简介
A. Kostanovskiy
Joint Institute for High Temperatures, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412
M. Zeodinov
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412
M. Kostanovskaya
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412
A. Pronkin
Joint Institute for High Temperatures, Russian Academy of Sciences
Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412
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