Emittance Properties of Siliconized Silicon Carbide in the Temperature Range of 1400–2200 K


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The results of an experimental study of the total hemispherical and spectral normal emittances powers of siliconized silicon carbide in the temperature range of 1400–2200 K are presented for the first time.

作者简介

A. Kostanovskiy

Joint Institute for High Temperatures, Russian Academy of Sciences

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Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

M. Zeodinov

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

M. Kostanovskaya

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

A. Pronkin

Joint Institute for High Temperatures, Russian Academy of Sciences

Email: kostanovskiy@gmail.com
俄罗斯联邦, Moscow, 125412

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