电邮这篇文章 Defect structure of tin-doped inas single crystals grown by the Czochralski method
- 作者: Sanjarovskii N.A.1, Parfenteva I.B.1, Yugova T.G.1, Knyazev S.N.1
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隶属关系:
- The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
- 期: 卷 69, 编号 3 (2024)
- 页面: 400-404
- 栏目: REAL STRUCTURE OF CRYSTALS
- URL: https://journal-vniispk.ru/0023-4761/article/view/263018
- DOI: https://doi.org/10.31857/S0023476124030041
- EDN: https://elibrary.ru/XOZLFO
- ID: 263018
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详细
Indium arsenide (InAs) single crystals heavily doped with Sn are found to have various violations of structural perfection, which depend on the Sn concentration in different regions of crystal. At low charge-carrier (electron) concentrations (~1.5 × 1018 cm–3) an unusual annular distribution of dislocations in the cross section is observed for the initial parts of crystal. The dislocation density lies in the range of (0.1–1.0) × 104 cm–2. At a carrier concentration above 4.0 × 1018 cm–3 indium inclusions and “vicinal growth hillocks” are observed in the final parts of crystals. The dislocation density in the final cross sections of crystals, in which the aforementioned defects are not observed, is in the range of (0.4–2.1) × 104 cm–2.
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作者简介
N. Sanjarovskii
The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Email: P_Yugov@mail.ru
俄罗斯联邦, 111524 Moscow
I. Parfenteva
The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Email: P_Yugov@mail.ru
俄罗斯联邦, 111524 Moscow
T. Yugova
The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
编辑信件的主要联系方式.
Email: P_Yugov@mail.ru
俄罗斯联邦, 111524 Moscow
S. Knyazev
The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Email: P_Yugov@mail.ru
俄罗斯联邦, 111524 Moscow
参考
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