| Issue |
Section |
Title |
File |
| Vol 72, No 3 (2017) |
Condensed Matter Physics |
A method of dopant electron energy spectrum parameterization for calculation of single-electron nanodevices |
|
| Vol 72, No 5 (2017) |
Condensed Matter Physics |
Single-electron transistor with an island formed by several dopant phosphorus atoms |
|
| Vol 73, No 5 (2018) |
Condensed Matter Physics |
Electron Transport in a Single-Electron Molecular Transistor with an Rh, Ru, or Pt Single-Atom Charge Center |
|
| Vol 74, No 2 (2019) |
Physics of Condensed State of Matter |
Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon |
|
| Vol 73, No 6 (2018) |
Condensed Matter Physics |
The Transport of Electrons through Tetrapod-Shaped CdTe/CdSe Nanocrystals |
|
