Reflection Spectra of Microarrays of Silicon Nanopillars
- Авторы: Basalaeva L.S.1, Nastaushev Y.V.1, Dultsev F.N.1,2, Kryzhanovskaya N.V.3, Moiseev E.I.3
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- St. Petersburg Academic University
- Выпуск: Том 124, № 5 (2018)
- Страницы: 730-734
- Раздел: Physical Optics
- URL: https://journal-vniispk.ru/0030-400X/article/view/165707
- DOI: https://doi.org/10.1134/S0030400X1805003X
- ID: 165707
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Аннотация
The optical-reflection spectra of microarrays of silicon nanopillars are studied in the visible and near-IR regions. The microarrays of silicon nanopillars are formed by electron-beam lithography and reactive ion etching. The reflection spectra of nanopillar arrays with pitches of 400, 600, 800, and 1000 nm are measured. The height of nanopillars in the array is 0.5 μm, and the diameter varies from 150 to 240 nm. It is noted that the spectral features of the reflection are caused by increased absorption of individual nanopillars and interference effects inside the array. A relation between the geometric parameters of nanopillars and the resonance reflection characteristics is determined taking into account the influence of the substrate.
Об авторах
L. Basalaeva
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Автор, ответственный за переписку.
Email: basalaeva@isp.nsc.ru
Россия, Novosibirsk, 630090
Yu. Nastaushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: basalaeva@isp.nsc.ru
Россия, Novosibirsk, 630090
F. Dultsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: basalaeva@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
N. Kryzhanovskaya
St. Petersburg Academic University
Email: basalaeva@isp.nsc.ru
Россия, St. Petersburg, 194021
E. Moiseev
St. Petersburg Academic University
Email: basalaeva@isp.nsc.ru
Россия, St. Petersburg, 194021
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