Optical properties of nonstoichiometric ZrOx according to spectroellipsometry data
- Autores: Kruchinin V.N.1, Aliev V.S.1, Gerasimova A.K.1, Gritsenko V.A.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Edição: Volume 121, Nº 2 (2016)
- Páginas: 241-245
- Seção: Condensed-Matter Spectroscopy
- URL: https://journal-vniispk.ru/0030-400X/article/view/164951
- DOI: https://doi.org/10.1134/S0030400X16080099
- ID: 164951
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Resumo
Amorphous nonstoichiometric ZrOx films of different composition have been synthesized by the method of ion-beam sputtering deposition of metallic zirconium in the presence of oxygen at different partial oxygen pressures in the growth zone, and their optical properties have been studied in the spectral range of 1.12–4.96 eV. It is found that light-absorbing films with metallic conductivity are formed at the partial oxygen pressure below 1.04 × 10–3 Pa and transparent films with dielectric conductivity are formed at the pressure above 1.50 × 10–3 Pa. It is shown that the spectral dependences of optical constants of ZrOx films are described well by the corresponding dispersion models: the Cauchy polynomial model for films with dielectric conductivity and the Lorentz–Drude oscillator model for films with metallic conductivity.
Sobre autores
V. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: kruch@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Aliev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kruch@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Gerasimova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kruch@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: kruch@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
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