电邮这篇文章 Effect of additional dielectric layer and grounded shield on rf characteristics of GaAs microwave monolithic integrated circuit elements in 3D-integrated modules
- 作者: Sheyerman F.I.1, Goleneva N.V.1, Kokolov A.А.1, Babak L.I.1, Cherkashin M.V.1, Panasenko P.V.2, Volosov А.V.2
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隶属关系:
- Tomsk State University of Control Systems and Radioelectronics
- SC «MERI»
- 期: 卷 70, 编号 1 (2025)
- 页面: 27-36
- 栏目: ЭЛЕКТРОНИКА СВЧ
- URL: https://journal-vniispk.ru/0033-8494/article/view/294112
- DOI: https://doi.org/10.31857/S0033849425010043
- EDN: https://elibrary.ru/HJLCEQ
- ID: 294112
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详细
The effect of coating GaAs monolithic integrated circuit with a benzocyclobutene dielectric layer and grounded copper shield is investigated. Using electromagnetic simulation up to 40 GHz, changes of RF characteristics of microstrip and coplanar transmission lines, a Marshand balun, and a bandpass filter due to coating are demonstrated. It is shown that from the performance variation viewpoint, the application of lines is preferred in GaAs monolithic integrated circuits used in 3D-integrated modules with such the coating.
作者简介
F. Sheyerman
Tomsk State University of Control Systems and Radioelectronics
编辑信件的主要联系方式.
Email: fish@tusur.ru
俄罗斯联邦, Lenin Avenue, 40, Tomsk, 634050
N. Goleneva
Tomsk State University of Control Systems and Radioelectronics
Email: fish@tusur.ru
俄罗斯联邦, Lenin Avenue, 40, Tomsk, 634050
A. Kokolov
Tomsk State University of Control Systems and Radioelectronics
Email: fish@tusur.ru
俄罗斯联邦, Lenin Avenue, 40, Tomsk, 634050
L. Babak
Tomsk State University of Control Systems and Radioelectronics
Email: fish@tusur.ru
俄罗斯联邦, Lenin Avenue, 40, Tomsk, 634050
M. Cherkashin
Tomsk State University of Control Systems and Radioelectronics
Email: fish@tusur.ru
俄罗斯联邦, Lenin Avenue, 40, Tomsk, 634050
P. Panasenko
SC «MERI»
Email: fish@tusur.ru
俄罗斯联邦, Akademika Valieva Str., 6/1, Zelenograd, 124460
А. Volosov
SC «MERI»
Email: fish@tusur.ru
俄罗斯联邦, Akademika Valieva Str., 6/1, Zelenograd, 124460
参考
- Воробьев С. // Электроника НТБ. 2018. № 7. С. 142.
- Nguen C. Radio-frequency Integrated-circuit Engineering. New Jersey: John Wiley&Sons Inc., 2015.
- Банков С.Е., Курушин А.А. Электродинамика для пользователей САПР СВЧ. М.: Солон-Экспресс, 2017.
- Svensson С., Dermer G.E. // IEEE Trans. 2001. V. AP-24. № 2. P. 191.
- Djordjevic A.R., Biljic R.M., Likar-Smiljanic V.D., Sarkar T.K. // IEEE Trans. 2001. V. EC-43. № 4. P. 662.
- Huang С.H., Chen C.H., Horng T.S. // Proc. 2009 Asia Pacific Microwave Conf. Singapore. 7–10 Dec. N.Y.: IEEE, 2009. P. 1004.
- Маттей Д.Л., Янг Л., Джонс Е.М.Т. Фильтры СВЧ, согласующие цепи и цепи связи. М.: Связь, 1972.
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