Behavior of HfB2-SiC (10, 15, and 20 vol %) ceramic materials in high-enthalpy air flows


Цитировать

Полный текст

Открытый доступ Открытый доступ
Доступ закрыт Доступ предоставлен
Доступ закрыт Только для подписчиков

Аннотация

HfB2–SiC ceramic samples containing 10, 15, and 20 vol % silicon carbide were prepared by spark plasma sintering. The samples were characterized by X-ray powder diffraction, SEM, and other methods. Their densities and calculated porosities were determined. The behavior of the materials under heating by a subsonic dissociated air flow was studied on a VGU-4 high-frequency inductive plasmatron. The average surface temperatures of the 10 and 15 vol % SiC samples were shown to increase up to 2550–2675°C during heating, due to the generation of surface localities having temperatures of 2600–2700°C (the initial surface temperature was ~1700–1900°C) and the progressive growth of these regions in area. The overall time during which the average surface temperatures of these samples were higher than 2000°C, was about 31–32 min. For the 20 vol % SiC sample, heat removal (when the sample touched a water-cooled holder) was shown to influence the surface temperature and surface temperature distribution. The variation in gas-phase composition over the central area of the sample surface during an experiment was studied using emission spectroscopy. Explanations are proposed to the variation of boron and silicon concentrations in the course of exposure to high-enthalpy flows. The elemental and phase compositions were determined and the microstructures were studied on the surface and sections of samples after long-term (~40-min) exposure to high-enthalpy air flows.

Об авторах

E. Simonenko

Kurnakov Institute of General and Inorganic Chemistry

Автор, ответственный за переписку.
Email: ep_simonenko@mail.ru
Россия, Leninskii pr. 31, Moscow, 119991

A. Gordeev

Ishlinsky Institute for Problems in Mechanics

Email: ep_simonenko@mail.ru
Россия, Moscow

N. Simonenko

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Россия, Leninskii pr. 31, Moscow, 119991

S. Vasilevskii

Ishlinsky Institute for Problems in Mechanics

Email: ep_simonenko@mail.ru
Россия, Moscow

A. Kolesnikov

Ishlinsky Institute for Problems in Mechanics

Email: ep_simonenko@mail.ru
Россия, Moscow

E. Papynov

Institute of Chemistry, Far-East Branch; Far-East Federal University

Email: ep_simonenko@mail.ru
Россия, Vladivostok; Vladivostok

O. Shichalin

Institute of Chemistry, Far-East Branch; Far-East Federal University

Email: ep_simonenko@mail.ru
Россия, Vladivostok; Vladivostok

V. Avramenko

Institute of Chemistry, Far-East Branch; Far-East Federal University

Email: ep_simonenko@mail.ru
Россия, Vladivostok; Vladivostok

V. Sevastyanov

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Россия, Leninskii pr. 31, Moscow, 119991

N. Kuznetsov

Kurnakov Institute of General and Inorganic Chemistry

Email: ep_simonenko@mail.ru
Россия, Leninskii pr. 31, Moscow, 119991

Дополнительные файлы

Доп. файлы
Действие
1. JATS XML

© Pleiades Publishing, Ltd., 2016

Согласие на обработку персональных данных

 

Используя сайт https://journals.rcsi.science, я (далее – «Пользователь» или «Субъект персональных данных») даю согласие на обработку персональных данных на этом сайте (текст Согласия) и на обработку персональных данных с помощью сервиса «Яндекс.Метрика» (текст Согласия).