The Electronic and Optical Properties of Au Doped Single-Layer Phosphorene
- Авторлар: Zhu Z.1, Chen C.1,2,3, Liu J.1, Han L.1
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Мекемелер:
- School of Science
- Material Science and Chemistry Engineering College
- Research Center for Materials Genome Engineering
- Шығарылым: Том 92, № 1 (2018)
- Беттер: 132-139
- Бөлім: Physical Chemistry of Nanoclusters and Nanomaterials
- URL: https://journal-vniispk.ru/0036-0244/article/view/169868
- DOI: https://doi.org/10.1134/S0036024418010314
- ID: 169868
Дәйексөз келтіру
Аннотация
The electronic properties and optical properties of single and double Au-doped phosphorene have been comparatively investigated using the first-principles plane-wave pseudopotential method based on density functional theory. The decrease from direct band gap 0.78 eV to indirect band gap 0.22 and 0.11 eV are observed in the single and double Au-doped phosphorene, respectively. The red shifts of absorbing edge occur in both doped systems, which consequently enhance the absorbing of infrared light in phosphorene. Band gap engineering can, therefore, be used to directly tune the optical absorption of phosphorene system by substitutional Au doping.
Негізгі сөздер
Авторлар туралы
Ziqing Zhu
School of Science
Email: tiancaiilu@qq.com
ҚХР, Wuhan, 430070
Changpeng Chen
School of Science; Material Science and Chemistry Engineering College; Research Center for Materials Genome Engineering
Хат алмасуға жауапты Автор.
Email: tiancaiilu@qq.com
ҚХР, Wuhan, 430070; Wuhan, 430074; Wuhan
Jiayi Liu
School of Science
Email: tiancaiilu@qq.com
ҚХР, Wuhan, 430070
Lu Han
School of Science
Email: tiancaiilu@qq.com
ҚХР, Wuhan, 430070
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