Sensor Properties of Field-Effect Transistors Based on Graphene Oxide and Nafion Films with Proton Conductivity
- Autores: Smirnov V.A.1, Mokrushin A.D.2, Denisov N.N.1, Dobrovolsky Y.A.1
-
Afiliações:
- Institute of Problems of Chemical Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
- Edição: Volume 92, Nº 7 (2018)
- Páginas: 1355-1361
- Seção: Physical Chemistry of Surface Phenomena
- URL: https://journal-vniispk.ru/0036-0244/article/view/170060
- DOI: https://doi.org/10.1134/S0036024418070269
- ID: 170060
Citar
Resumo
The proton conductivity of graphene oxide (GO) and Nafion films was studied depending on the humidity and voltage on electrodes. The electric properties of the films were similar, but the mobility of positive charges in Nafion was approximately two orders of magnitude higher than in GO. In GO films, the negative ion current with a positive voltage bias was up to ~10% of the proton current, while in Nafion films it was almost absent (<1%). The sensors based on GO and Nafion films were most effective at humidity (RH) in the range 20–80%.
Palavras-chave
Sobre autores
V. Smirnov
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
A. Mokrushin
Institute of Microelectronics Technology and High Purity Materials,Russian Academy of Sciences
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
N. Denisov
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
Yu. Dobrovolsky
Institute of Problems of Chemical Physics, Russian Academy of Sciences
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
Arquivos suplementares
