Sensor Properties of Field-Effect Transistors Based on Graphene Oxide and Nafion Films with Proton Conductivity


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The proton conductivity of graphene oxide (GO) and Nafion films was studied depending on the humidity and voltage on electrodes. The electric properties of the films were similar, but the mobility of positive charges in Nafion was approximately two orders of magnitude higher than in GO. In GO films, the negative ion current with a positive voltage bias was up to ~10% of the proton current, while in Nafion films it was almost absent (<1%). The sensors based on GO and Nafion films were most effective at humidity (RH) in the range 20–80%.

Sobre autores

V. Smirnov

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Autor responsável pela correspondência
Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432

A. Mokrushin

Institute of Microelectronics Technology and High Purity Materials,
Russian Academy of Sciences

Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432

N. Denisov

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432

Yu. Dobrovolsky

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: vas@icp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432

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