Effect of Laser Radiation on InSe and GaSe Thin Films Grown via Laser Sublimation and Chemical Deposition

Resumo

The formation of indium and gallium monoselenide thin films under the action of a powerful Nd : YAG laser is described. The use of laser radiation allows the production of substances of high purity and with accurately controlled composition. After GaSe nanoparticles are irradiated with high power laser, their structures change, clusters appear, and the size of nanoparticles falls from 93–75 to 10–15 nm. The rectification coefficient for an n-InSe/p-GaSe heterojunction subjected to laser excitation is 10⁴ at an applied external voltage of ~1 V.