Мақаланы E-mail арқылы жіберу THE INFLUENCE OF IRRADIATION OF XE IONS WITH ENERGY 167 MEV ON SUPERCONDUCTING PROPERTIES OF 2G HTS WIRES
- Авторлар: Degtyarenko P.N.1,2, Skuratov V.A.3, Vasil'ev A.L.4,5, Ovcharov A.V.4, Petrzhik A.M.2,6, Semina V.K.3, Gavrilkin C.Y.7, Novikov M.S.3, Malyavina A.Y.8, Amelichev V.A.2, Tsvetkov A.Y.7
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Мекемелер:
- Joint Institute for high temperature of RAS
- S-innovations LLC
- Joint institute for nuclear research
- National research center “Kurchatov institute”
- National Research University MPTI
- Kotel’nikov Institute of Radio Engineering and Electronics of RAS
- Lebedev Physical Institute of Russian Academy of Science
- National Research Nuclear University MEPhI
- Шығарылым: Том 165, № 6 (2024)
- Беттер: 827-832
- Бөлім: Articles
- URL: https://journal-vniispk.ru/0044-4510/article/view/259043
- DOI: https://doi.org/10.31857/S0044451024060099
- ID: 259043
Дәйексөз келтіру
Аннотация
Systematic studies of 2G HTS wires irradiated by high-energy 167 MeV Xe ions and fluences up to 1·1012 cm−2 have been carried out. The optimal fluence value (the number of particles passing through 1 cm2 of the sample surface) for obtaining the maximum critical current at different temperatures and external magnetic fields has been determined. An increase in the external magnetic field leads to a shift of the critical current peak towards higher fluences in the whole temperature range. The results of microstructural investigations by transmission electron microscopy and X-ray diffraction methods are given. It is shown that because of irradiation ion tracks with a diameter of about 5-8 nm are formed, acting as effective pinning centers. X-ray diffraction analysis indicates a decrease in texture sharpness under the influence of irradiation.
Авторлар туралы
P. Degtyarenko
Joint Institute for high temperature of RAS; S-innovations LLC
Email: degtyarenkopn@gmail.com
Ресей, 125412, Moscow; 117246, Moscow
V. Skuratov
Joint institute for nuclear research
Email: skuratov@jinr.ru
Ресей, 141989, Dubna, Moscow region
A. Vasil'ev
National research center “Kurchatov institute”; National Research University MPTI
Email: degtyarenkopn@gmail.com
Ресей, 123182, Moscow; 141701, Dolgoprudny, Moscow region
A. Ovcharov
National research center “Kurchatov institute”
Email: ovcharov.91@gmail.com
Ресей, 123182, Moscow
A. Petrzhik
S-innovations LLC; Kotel’nikov Institute of Radio Engineering and Electronics of RAS
Email: a.petrzhik@s-innovations.ru
Ресей, 117246, Moscow; 125009, Moscow
V. Semina
Joint institute for nuclear research
Email: degtyarenkopn@gmail.com
Ресей, 141989, Dubna, Moscow region
C. Gavrilkin
Lebedev Physical Institute of Russian Academy of Science
Email: gavrs@sci.lebedev.ru
Ресей, 119991, Moscow
M. Novikov
Joint institute for nuclear research
Email: msnovikov@jinr.ru
Ресей, 141989, Dubna, Moscow region
A. Malyavina
National Research Nuclear University MEPhI
Email: ayu.malyavina@gmail.com
Ресей, 115409, Moscow
V. Amelichev
S-innovations LLC
Email: degtyarenkopn@gmail.com
Ресей, 117246, Moscow
A. Tsvetkov
Lebedev Physical Institute of Russian Academy of Science
Хат алмасуға жауапты Автор.
Email: degtyarenkopn@gmail.com
Ресей, 119991, Moscow
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