Мақаланы E-mail арқылы жіберу ATOMIC MECHANISM OF THE INFLUENCE OF ELASTIC DEFORMATIONS IN EPITAXIAL Ge LAYERS ON THE SURFACE Si(111) ON THE DIFFUSION OF Ge ADATOMS
- Авторлар: Zhachuk R.A.1
-
Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
- Шығарылым: Том 166, № 2 (2024)
- Беттер: 232-237
- Бөлім: Articles
- URL: https://journal-vniispk.ru/0044-4510/article/view/261687
- DOI: https://doi.org/10.31857/S004445102408008X
- ID: 261687
Дәйексөз келтіру
Аннотация
Using density functional theory calculations, the atomic mechanism of the influence of compressive strains formed on the Ge(111) – 7 × 7 surface of epitaxial layers , grown on Si(111) substrate, on the diffusion of Ge adatoms was investigated. It was found that the energy barrier limiting the migration of Ge adatoms over long distances is located near corner vacancies of the 7 × 7 structure and is caused by the formation of a covalent bond between the Ge adatom and a dimer atom within the 7 × 7 structure. It is shown that the barrier increase on the elastically compressed surface occurs due to strengthening of the dimer bond during surface compression, which leads to weakening of the bond between the Ge adatom and the dimer atom.
Авторлар туралы
R. Zhachuk
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: zhachuk@gmail.com
Ресей, 630090, Novosibirsk
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