Simulation of high-power 8-mm band avalanche-oscillator diodes
- Autores: Maksymov P.P.1
- 
							Afiliações: 
							- Usikov Institute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine
 
- Edição: Volume 60, Nº 8 (2017)
- Páginas: 375-381
- Seção: Article
- URL: https://journal-vniispk.ru/0735-2727/article/view/177117
- DOI: https://doi.org/10.3103/S0735272717080064
- ID: 177117
Citar
Resumo
The results of computer simulation of 8-mm band high-power avalanche-oscillator diodes (AOD) based on abrupt reverse biased p–n junctions with constant voltage have been presented. It is shown that AOD synchronously generate two oscillations in p- and n-regions of p–n junction, respectively. A technique is proposed for determining the parameters that ensure the diode operation in the mode of coherent oscillations. It is shown that the diode output power in this operation mode increases at the expense of summing-up the electron and hole components. The dynamic range of output power and the electronic efficiency are also determined.
Sobre autores
P. Maksymov
Usikov Institute of Radiophysics and Electronics of the National Academy of Sciences of Ukraine
							Autor responsável pela correspondência
							Email: maksymov.pvl@ukr.net
				                					                																			                												                	Ucrânia, 							Kharkiv						
Arquivos suplementares
 
				
			 
						 
						 
						 
						 
					 
				 
  
  
  
  
  Enviar artigo por via de e-mail
			Enviar artigo por via de e-mail  Acesso aberto
		                                Acesso aberto Acesso está concedido
						Acesso está concedido Somente assinantes
		                                		                                        Somente assinantes
		                                					