Dislocation Multiplication in the Flexoelectric Distortion Grid with an Increase in Electric Field Amplitude

Аннотация

It is shown that a plane one-dimensional flexoelectric grid well simulates the processes of the nucleation of defects (dislocations) and an increase in their number in crystals under increasing mechanical stresses in the crystal lattice. The latter rise with an increase in electric field above the instability threshold and the corresponding growth of the modulations of the flexoelectric-grid spatial structure. Parameters of these modulations are obtained for various boundary conditions at the surface of a nematic film oriented in one direction. The previous data on the dislocation patterns in strong fields are explained. The applicability of the dislocation theory to the planar one-dimensional grid is shown.