作者的详细信息

Grekhov, I. V.

期	栏目	标题	文件
卷 61, 编号 2 (2016)	Solid State Electronics	Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
卷 61, 编号 3 (2016)	Solid State Electronics	Powerful diode nanosecond current opening switch made of p-silicon (p-SOS)
卷 62, 编号 1 (2017)	Short Communications	Analysis of the process of turning off an integrated thyristor with external MOSFET control
卷 62, 编号 5 (2017)	Short Communications	High-power subnanosecond silicon avalanche shaper
卷 62, 编号 11 (2017)	Solid State Electronics	Analysis of integrated thyristor switching-off by a reverse gate pulse current
卷 62, 编号 12 (2017)	Theoretical and Mathematical Physics	The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode
卷 63, 编号 1 (2018)	Optics	Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)
卷 63, 编号 6 (2018)	Short Communications	Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p⁺−i−n⁺ Diode
卷 64, 编号 3 (2019)	Solid State Electronics	Numerical and Experimental Study of an Optimized p-SOS Diode