Analysis of the process of turning off an integrated thyristor with external MOSFET control
- Авторлар: Grekhov I.V.1, Lyublinskiy A.G.1, Skidanov A.A.2
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Мекемелер:
- Ioffe Physical-Technical Institute
- ZAO VZPP-Mikron
- Шығарылым: Том 62, № 1 (2017)
- Беттер: 183-186
- Бөлім: Short Communications
- URL: https://journal-vniispk.ru/1063-7842/article/view/198842
- DOI: https://doi.org/10.1134/S106378421701008X
- ID: 198842
Дәйексөз келтіру
Аннотация
The results of an experimental study of the process of turning off an integrated thyristor in a circuit with an inductive load have been presented. It has been demonstrated that the maximum switched current density is limited by high-frequency oscillating process under the conditions of dynamic avalanche breakdown, which produces unstable current pinches. This process starts from the beginning of the voltage rise at the collector junction and is initiated by electron flux injected by the emitter to the space-charge collector region. Possible ways to raise the maximum switched current density have been discussed.
Авторлар туралы
I. Grekhov
Ioffe Physical-Technical Institute
Хат алмасуға жауапты Автор.
Email: grekhov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Lyublinskiy
Ioffe Physical-Technical Institute
Email: grekhov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Skidanov
ZAO VZPP-Mikron
Email: grekhov@mail.ioffe.ru
Ресей, Voronezh, 394033
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