Tunnel Emission from Nanostructured Field-Emission Array Cathodes with a Fluorine–Carbon Coating
- Авторлар: Yafarov R.K.1
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Мекемелер:
- Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
- Шығарылым: Том 64, № 6 (2019)
- Беттер: 897-901
- Бөлім: Physical Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/203648
- DOI: https://doi.org/10.1134/S1063784219060240
- ID: 203648
Дәйексөз келтіру
Аннотация
Variations of the morphology and field-emission properties of surface-structured n- and p-type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.
Авторлар туралы
R. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics, Saratov Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: pirpc@yandex.ru
Ресей, Saratov, 410019
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