MBE-grown InSb photodetector arrays
- Авторы: Bakarov A.K.1,2, Gutakovskii A.K.1, Zhuravlev K.S.1,2, Kovchavtsev A.P.1, Toropov A.I.1, Burlakov I.D.3, Boltar’ K.O.3, Vlasov P.V.3, Lopukhin A.A.3
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- AO NPO Orion
- Выпуск: Том 62, № 6 (2017)
- Страницы: 915-919
- Раздел: Solid State Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/199543
- DOI: https://doi.org/10.1134/S1063784217060044
- ID: 199543
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Аннотация
The MBE method has been applied to grow InSb layers on InSb substrates. These layers have served as a basis for fabricating mid-wave IR photodetector arrays. The characteristics of photodetector arrays on epitaxial InSb layers have been compared with those of series-produced single-crystal InSb arrays.
Об авторах
A. Bakarov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Автор, ответственный за переписку.
Email: bakarov@isp.nsc.ru
Россия, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Gutakovskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: bakarov@isp.nsc.ru
Россия, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: bakarov@isp.nsc.ru
Россия, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: bakarov@isp.nsc.ru
Россия, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Toropov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: bakarov@isp.nsc.ru
Россия, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
I. Burlakov
AO NPO Orion
Email: bakarov@isp.nsc.ru
Россия, ul. Kosinskaya 9, Moscow, 119991
K. Boltar’
AO NPO Orion
Email: bakarov@isp.nsc.ru
Россия, ul. Kosinskaya 9, Moscow, 119991
P. Vlasov
AO NPO Orion
Email: bakarov@isp.nsc.ru
Россия, ul. Kosinskaya 9, Moscow, 119991
A. Lopukhin
AO NPO Orion
Email: bakarov@isp.nsc.ru
Россия, ul. Kosinskaya 9, Moscow, 119991
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