Formation of semiconductor titanium disilicide
- Autores: Kovalevskii A.A.1, Labunov V.A.1, Strogova A.S.1, Tsybul’skii V.V.1
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Afiliações:
- State University of Informatics anf Radioelectronics
- Edição: Volume 61, Nº 9 (2016)
- Páginas: 1343-1345
- Seção: Solid State
- URL: https://journal-vniispk.ru/1063-7842/article/view/197983
- DOI: https://doi.org/10.1134/S1063784216090139
- ID: 197983
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Resumo
Nanostructured titanium disilicide powders with semiconductor properties are synthesized and studied. The optical and electrophysical properties of TiSi2 are found to be controlled by its crystallite size.
Sobre autores
A. Kovalevskii
State University of Informatics anf Radioelectronics
Email: strogova@bsuir.by
Belarus, Minsk, 220013
V. Labunov
State University of Informatics anf Radioelectronics
Email: strogova@bsuir.by
Belarus, Minsk, 220013
A. Strogova
State University of Informatics anf Radioelectronics
Autor responsável pela correspondência
Email: strogova@bsuir.by
Belarus, Minsk, 220013
V. Tsybul’skii
State University of Informatics anf Radioelectronics
Email: strogova@bsuir.by
Belarus, Minsk, 220013
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