Отправить статью по E-mail Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges
- Авторы: Korolyov S.A.1, Vostokov N.V.1,2, D’yakonova N.V.3, Shashkin V.I.1,2
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Учреждения:
- Institute for Physics of Microstructures
- Lobachevsky State University
- Université Montpellier 2
- Выпуск: Том 62, № 5 (2017)
- Страницы: 765-772
- Раздел: Solid State Electronics
- URL: https://journal-vniispk.ru/1063-7842/article/view/199416
- DOI: https://doi.org/10.1134/S1063784217050139
- ID: 199416
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Аннотация
The detection properties of a field-effect transistor with a low Schottky barrier gate in the microwave and terahertz ranges has been studied theoretically. Different detector circuits have been considered. The voltage and current distributions along the channel, the input impedance of the transistor, sensitivity, and noise equivalent power have been found. The influence of the Schottky barrier height on the above characteristics has been analyzed.
Об авторах
S. Korolyov
Institute for Physics of Microstructures
Автор, ответственный за переписку.
Email: pesh@ipmras.ru
Россия, ul. Akademicheskaya 7, Afonino, Nizhny Novgorod oblast, 603087
N. Vostokov
Institute for Physics of Microstructures; Lobachevsky State University
Email: pesh@ipmras.ru
Россия, ul. Akademicheskaya 7, Afonino, Nizhny Novgorod oblast, 603087; ul. Gagarina 23, Nizhny Novgorod, 603950
N. D’yakonova
Université Montpellier 2
Email: pesh@ipmras.ru
Франция, Montpellier, 34095
V. Shashkin
Institute for Physics of Microstructures; Lobachevsky State University
Email: pesh@ipmras.ru
Россия, ul. Akademicheskaya 7, Afonino, Nizhny Novgorod oblast, 603087; ul. Gagarina 23, Nizhny Novgorod, 603950
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