Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties


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The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.

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M. Dorokhin

Research Physicotechnical Institute

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Email: dorokhin@nifti.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950

A. Zdoroveyshchev

Research Physicotechnical Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950

E. Malysheva

Research Physicotechnical Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950

Yu. Danilov

Research Physicotechnical Institute

Email: dorokhin@nifti.unn.ru
俄罗斯联邦, pr. Gagarina 23, Nizhny Novgorod, 603950

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