Thermal-Conductive Boards Based on Aluminum with an Al2O3 Nanostructured Layer for Products of Power Electronics


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The experimental results of electrical and thermal characteristics of circuit boards based on aluminum with a nanostructured layer of anodic aluminum oxide and copper conductors for assembling high-power field-effect transistors have been considered. It has been shown that the presence of a thin dielectric layer and thick aluminum base with high thermal conductivity provides a uniform distribution of heat generated by the active element over the entire volume of the board without formation of local regions with increased temperature. The experimental results have shown that the temperature gradient between the heat source and anodic aluminum oxide surface is about 17–18°C at a surface heat power of 4.4 W/cm2.

作者简介

E. Muratova

St. Petersburg Electrotechnical University LETI

编辑信件的主要联系方式.
Email: SokolovaEkNik@yandex.ru
俄罗斯联邦, St. Petersburg, 197376

V. Moshnikov

St. Petersburg Electrotechnical University LETI

Email: SokolovaEkNik@yandex.ru
俄罗斯联邦, St. Petersburg, 197376

V. Luchinin

St. Petersburg Electrotechnical University LETI

Email: SokolovaEkNik@yandex.ru
俄罗斯联邦, St. Petersburg, 197376

A. Bobkov

St. Petersburg Electrotechnical University LETI

Email: SokolovaEkNik@yandex.ru
俄罗斯联邦, St. Petersburg, 197376

I. Vrublevsky

Belarusian State University of Informatics and Radioelectronics

Email: SokolovaEkNik@yandex.ru
白俄罗斯, Minsk, 220013

K. Chernyakova

Belarusian State University of Informatics and Radioelectronics

Email: SokolovaEkNik@yandex.ru
白俄罗斯, Minsk, 220013

E. Terukov

Ioffe Institute,

Email: SokolovaEkNik@yandex.ru
俄罗斯联邦, St. Petersburg, 194021

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