Автор туралы ақпарат

Shmidt, N. M.

Шығарылым	Бөлім	Атауы	Файл
Том 42, № 6 (2016)	Article	Solar-blind Al_xGa_1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter
Том 42, № 7 (2016)	Article	The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
Том 42, № 11 (2016)	Article	Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
Том 43, № 1 (2017)	Article	Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters
Том 44, № 7 (2018)	Article	The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers