电邮这篇文章 High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines
- 作者: Chizh A.L.1, Mikitchuk K.B.1, Zhuravlev K.S.2,3, Dmitriev D.V.2,3, Toropov A.I.2, Valisheva N.A.2, Aksenov M.S.2, Gilinsky A.M.2, Chistokhin I.B.2
-
隶属关系:
- SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus
- A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- 期: 卷 45, 编号 7 (2019)
- 页面: 739-741
- 栏目: Article
- URL: https://journal-vniispk.ru/1063-7850/article/view/208381
- DOI: https://doi.org/10.1134/S1063785019070204
- ID: 208381
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.
作者简介
A. Chizh
SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus
Email: zhur@isp.nsc.ru
白俄罗斯, Minsk, 220072
K. Mikitchuk
SSPA Optics, Optoelectronics, and Laser Technology, National Academy of Sciences of Belarus
Email: zhur@isp.nsc.ru
白俄罗斯, Minsk, 220072
K. Zhuravlev
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
编辑信件的主要联系方式.
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
D. Dmitriev
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Toropov
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
N. Valisheva
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Aksenov
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Gilinsky
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Chistokhin
A.V. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences
Email: zhur@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
补充文件
