Studying the Surface Conductivity of a Thallium Bilayer on Si(111) Substrate after Adsorption of Lithium and Rubidium


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Аннотация

Changes in the state of a thallium bilayer on Si(111) substrate, Si(111)6 × 6–Tl, after adsorption of lithium and rubidium were studied using low-energy electron-diffraction and four-point probe-conductivity measurements. New surface reconstructions 5 × 1 and \(5\sqrt 3 \times 5\sqrt 3 \) were observed after the adsorption of lithium, and 2 × 2 and \(\sqrt 3 \times \sqrt 3 \) reconstructions appeared after the adsorption of rubidium. The surface conductivity of silicon substrates was studied as a function of the dose of deposited adsorbate. It is established that the formation of both 5 × 1 and 2 × 2 reconstructions retains the conducting properties of a two-dimensional channel constituted by the thallium bilayer.

Авторлар туралы

M. Ryzhkova

Institute of Automation and Control Processes, Far East Branch

Email: tsukanov@iacp.dvo.ru
Ресей, Vladivostok, 690041

E. Borisenkoa

Institute of Automation and Control Processes, Far East Branch

Email: tsukanov@iacp.dvo.ru
Ресей, Vladivostok, 690041

M. Ivanchenko

Institute of Automation and Control Processes, Far East Branch; Far Eastern Federal University

Email: tsukanov@iacp.dvo.ru
Ресей, Vladivostok, 690041; Vladivostok, 690950

D. Tsukanov

Institute of Automation and Control Processes, Far East Branch; Far Eastern Federal University

Хат алмасуға жауапты Автор.
Email: tsukanov@iacp.dvo.ru
Ресей, Vladivostok, 690041; Vladivostok, 690950

A. Zotov

Institute of Automation and Control Processes, Far East Branch; Far Eastern Federal University

Email: tsukanov@iacp.dvo.ru
Ресей, Vladivostok, 690041; Vladivostok, 690950

A. Saranin

Institute of Automation and Control Processes, Far East Branch; Far Eastern Federal University

Email: tsukanov@iacp.dvo.ru
Ресей, Vladivostok, 690041; Vladivostok, 690950

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