Field effect in a graphene oxide transistor for proton and electron–hole conductivities

V. A. Smirnov; A. D. Mokrushin; V. P. Vasil’ev; N. N. Denisov; K. N. Denisova

doi:10.1134/S1063785016070129

Field effect in a graphene oxide transistor for proton and electron–hole conductivities

作者: Smirnov V.A.¹, Mokrushin A.D.², Vasil’ev V.P.¹, Denisov N.N.¹, Denisova K.N.³
隶属关系:
1. Institute of Problems of Chemical Physics
2. Institute of Microelectronics Technology and High Purity Materials
3. Moscow State University
期: 卷 42, 编号 7 (2016)
页面: 671-673
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/199901
DOI: https://doi.org/10.1134/S1063785016070129
ID: 199901

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详细

Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.