Zinc Diffusion into InP via a Narrow Gap from a Planar Zn 3 P 2 -Based Source

M. O. Petrushkov; M. A. Putyato; I. B. Chistokhin; B. R. Semyagin; E. A. Emel’yanov; M. Yu. Esin; T. A. Gavrilova; A. V. Vasev; V. V. Preobrazhenskii

doi:10.1134/S1063785018070258

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn₃P₂-Based Source

作者: Petrushkov M.O.¹, Putyato M.A.¹, Chistokhin I.B.¹, Semyagin B.R.¹, Emel’yanov E.A.¹, Esin M.Y.¹, Gavrilova T.A.¹, Vasev A.V.¹, Preobrazhenskii V.V.¹
隶属关系:
1. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch
期: 卷 44, 编号 7 (2018)
页面: 612-614
栏目: Article
URL: https://journal-vniispk.ru/1063-7850/article/view/207791
DOI: https://doi.org/10.1134/S1063785018070258
ID: 207791

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详细

An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.