Quasi-Two-Dimensional Electron–Hole Liquid in Si/SiO2 Quantum Wells
- 作者: Vasilchenko A.A.1,2, Kopytov G.F.2
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隶属关系:
- Kuban State Technological University
- Kuban State University
- 期: 卷 61, 编号 3 (2018)
- 页面: 457-462
- 栏目: Physics of Semiconductors and Dielectrics
- URL: https://journal-vniispk.ru/1064-8887/article/view/240300
- DOI: https://doi.org/10.1007/s11182-018-1420-8
- ID: 240300
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详细
To calculate the energy and equilibrium density of electron-hole pairs in SiO2/Si/SiO2 quantum wells (QWs), nonlinear Schrödinger equations for electrons and holes were numerically solved. Calculations were carried out for (100) and (111) silicon surfaces and various values of the QW width. It is shown that the binding energy of electron-hole pairs in a quasi-two-dimensional electron-hole liquid (EHL) is much higher than the binding energy in a three-dimensional EHL. The results of calculations are compared with the experimental results for a wide range of QW widths.
作者简介
A. Vasilchenko
Kuban State Technological University; Kuban State University
编辑信件的主要联系方式.
Email: a_vas2002@mail.ru
俄罗斯联邦, Krasnodar; Krasnodar
G. Kopytov
Kuban State University
Email: a_vas2002@mail.ru
俄罗斯联邦, Krasnodar
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