High Density Boron Carbide Ceramics
- 作者: Perevislov S.N.1, Shcherbak P.V.1, Tomkovich M.V.2
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隶属关系:
- St. Petersburg State Technological Institute (technical university)
- Ioffe Physical-Technical Institute of the Russian Academy of Sciences
- 期: 卷 59, 编号 1 (2018)
- 页面: 32-36
- 栏目: Article
- URL: https://journal-vniispk.ru/1083-4877/article/view/248978
- DOI: https://doi.org/10.1007/s11148-018-0178-4
- ID: 248978
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详细
Porous preforms of B4C + C and B4C + C + Si materials were impregnated by liquid (molten) silicon to obtain high-density product with a relative density of 99.0 % and porosity of 0.9%. Silicon impregnation was carried out by saturating the samples through the pores of the SiC + C sacrificial preforms. This method allows to reduce both the dissolution of boron carbide grains in the silicon solution and the formation of the B12(C, Si, B)3 phase. This reduces the fragility of the product and thereby improves the mechanical characteristics of the B4C ceramics.
作者简介
S. Perevislov
St. Petersburg State Technological Institute (technical university)
编辑信件的主要联系方式.
Email: perevislov@mail.ru
俄罗斯联邦, St. Petersburg
P. Shcherbak
St. Petersburg State Technological Institute (technical university)
Email: perevislov@mail.ru
俄罗斯联邦, St. Petersburg
M. Tomkovich
Ioffe Physical-Technical Institute of the Russian Academy of Sciences
Email: perevislov@mail.ru
俄罗斯联邦, St. Petersburg
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