Specific Features of Temperature Dependence of Graphene Oxide Resistance
- Authors: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.S.4
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- OOO AkKo Lab
- Ioffe Institute
- Research and Development Center for Thin-Film Technologies in Energetics
- Issue: Vol 55, No 1 (2019)
- Pages: 50-54
- Section: Nanoscale and Nanostructured Materials and Coatings
- URL: https://journal-vniispk.ru/2070-2051/article/view/204784
- DOI: https://doi.org/10.1134/S2070205119010052
- ID: 204784
Cite item
Abstract
Temperature dependence of graphene oxide resistance during continuous heating and cooling under argon atmosphere at 300–550 K and Raman spectra were studied. Resistance is constant within 300–370 K during cooling. It is thermostable under further heating. Temperature dependence of resistance changes according to activation law within 370–550 K. The decrease of resistance at the increase is related to the removal of functional oxygen-containing groups, which is proved by the results of Raman spectra.
About the authors
A. A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Author for correspondence.
Email: babaev-arif@mail.ru
Russian Federation, Makhachkala, 367003
M. E. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
Russian Federation, Makhachkala, 367003
D. Yu. Kornilov
OOO AkKo Lab
Email: babaev-arif@mail.ru
Russian Federation, Moscow, 129110
S. V. Tkachev
OOO AkKo Lab
Email: babaev-arif@mail.ru
Russian Federation, Moscow, 129110
E. I. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
Russian Federation, St. Petersburg, 194021
V. S. Levitskii
Research and Development Center for Thin-Film Technologies in Energetics
Email: babaev-arif@mail.ru
Russian Federation, St. Petersburg, 194064
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