Email this article Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x(Si2)x and nGaAs–p(InSb)1–x(Sn2)x heterostructures
- Authors: Usmonov S.N.1
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Affiliations:
- Physical–Technical Institute, Scientific Association “Physics–Sun”
- Issue: Vol 52, No 3 (2016)
- Pages: 211-214
- Section: Direct Conversion of Solar Energy into Electric Energy
- URL: https://journal-vniispk.ru/0003-701X/article/view/149179
- DOI: https://doi.org/10.3103/S0003701X16030178
- ID: 149179
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Abstract
The spectral dependences of heterostructures pSi–n(GaSb)1–x(Si2)x (0 ≤ х ≤ 0.07) and nGaAs–p(InSb)1–x(Sn2)x (0 ≤ х ≤ 0.05) alloyed by GaAs molecules are studied. The ionization energy of GaAs molecules in the studied structures is assessed and its dependence on the width of the band gap and parameter of the lattice of the basic semiconductor are found.
About the authors
Sh. N. Usmonov
Physical–Technical Institute, Scientific Association “Physics–Sun”
Author for correspondence.
Email: sh_usmonov@rambler.ru
Uzbekistan, Tashkent, 100084
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