Email this article Photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures with quantum dots
- Authors: Saidov A.S.1, Usmonov S.N.1, Amonov K.A.1, Saidov M.S.1, Kutlimuratov B.R.2
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Affiliations:
- Physics–Sun Scientific and Production Association, Institute of Physics and Technology
- Islam Karimov State Technical University
- Issue: Vol 53, No 4 (2017)
- Pages: 287-290
- Section: Direct Solar Energy Conversion into Electrical Energy
- URL: https://journal-vniispk.ru/0003-701X/article/view/149331
- DOI: https://doi.org/10.3103/S0003701X17040132
- ID: 149331
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Abstract
The spectral dependences of photosensitivity of pSi-n(Si2)1–x–y(Ge2)x(ZnSe)y heterostructures and structural features of epitaxial film of (Si2)1–x–y(Ge2)x(ZnSe)y solid solution were studied by atomic force microscopy. The peaks of sensitivity at photon energies of 1.60, 1.85, 2.40, and 2.54 eV due to ZnSe and Ge quantum dots in the solid solution layer were revealed.
About the authors
A. S. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Author for correspondence.
Email: amin@uzsci.uz
Uzbekistan, Tashkent, 100084
Sh. N. Usmonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Author for correspondence.
Email: kvant@mail.ru
Uzbekistan, Tashkent, 100084
K. A. Amonov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
Uzbekistan, Tashkent, 100084
M. S. Saidov
Physics–Sun Scientific and Production Association, Institute of Physics and Technology
Email: kvant@mail.ru
Uzbekistan, Tashkent, 100084
B. R. Kutlimuratov
Islam Karimov State Technical University
Email: kvant@mail.ru
Uzbekistan, Tashkent, 100095
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