Email this article Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO2-CdS/Cu(InGa)Se2-Ag
- Authors: Kobulov R.R.1, Matchanov N.A.1, Ataboyev O.K.1
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Affiliations:
- International Solar Energy Institute
- Issue: Vol 54, No 2 (2018)
- Pages: 91-94
- Section: Direct Conversion of Solar Energy to Electricity
- URL: https://journal-vniispk.ru/0003-701X/article/view/149395
- DOI: https://doi.org/10.3103/S0003701X18020068
- ID: 149395
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Abstract
The surface morphology and photoelectric characteristics of a thin-film SnO2-CdS/Cu(InGa)Se2-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se2 film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.
About the authors
R. R. Kobulov
International Solar Energy Institute
Author for correspondence.
Email: krr1982@bk.ru
Uzbekistan, Tashkent
N. A. Matchanov
International Solar Energy Institute
Email: krr1982@bk.ru
Uzbekistan, Tashkent
O. K. Ataboyev
International Solar Energy Institute
Email: krr1982@bk.ru
Uzbekistan, Tashkent
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