Email this article Fractal Control of the Electron Spectrum of the Interfaces in Solar Elements Based on Covalent Semiconductors
- Authors: Ashurov K.B.1, Kutlimurotov B.R.1, Oksengendler B.L.1
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Affiliations:
- Arifov Institute of Ion-Plasma and Laser Technologies
- Issue: Vol 54, No 3 (2018)
- Pages: 159-163
- Section: Direct Conversion of Solar Energy to Electricity
- URL: https://journal-vniispk.ru/0003-701X/article/view/149423
- DOI: https://doi.org/10.3103/S0003701X18030039
- ID: 149423
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Abstract
Based on a combination of the Madelung-Seitz and Phillips-Penn approaches, the effect of fractality of the interface on its electronic structure in a covalent semiconductor solar cell is considered. The possibility of pumping a local level from the region of recombination to the region of attachment and back is found. A number of applications are considered, in particular, a new mechanism of radiative degradation by lowering the fractality of the interface.
About the authors
Kh. B. Ashurov
Arifov Institute of Ion-Plasma and Laser Technologies
Author for correspondence.
Email: bek.fiz.1986@mail.ru
Uzbekistan, Tashkent, 100125
B. R. Kutlimurotov
Arifov Institute of Ion-Plasma and Laser Technologies
Email: bek.fiz.1986@mail.ru
Uzbekistan, Tashkent, 100125
B. L. Oksengendler
Arifov Institute of Ion-Plasma and Laser Technologies
Email: bek.fiz.1986@mail.ru
Uzbekistan, Tashkent, 100125
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