Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells

Abstract

(ZnSe)_x(SnSe)_1–x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe)_0.1 (SnSe)_0.9 films are studied. The size of film grains is 5–6 μm. The results of X-ray diffraction analysis of specimens have revealed that the films have a crystalline (orthorhombic) structure. The structural parameters of the produced films are presented. The electrical conductivity of the films measured using the Van der Pauw method varies within 15–0.6 Ω cm^–1.