Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

Abstract

The epitaxial layers of the solid substitutional solution (ZnSe)_{1 – x –  y}(Si₂)_x(GaP)_y (0 ≤ х ≤ 0.01, 0 ≤ у ≤ 0.09) have been grown on pSi substrates via liquid-phase epitaxy of a limited volume of stannic solution melt. The spectral dependence of the photosensitivity of pSi–n(ZnSe)_{1 – x –  y}(Si₂)_x(GaP)_y structures is studied, and peaks of photoresponses are detected with photon energies of 1.6, 1.66, and 1.92 eV at ambient temperature. It is shown that the direct branch of volt–ampere characteristic stably retains its parameters within the temperature range 20–120°C. The values of the “characteristic” energy, as determined from the temperature-independent, volt–ampere characteristic, are 0.33 eV.