Characterization of CdTe and CdS Films for Photoresistors

T. M. Razykov; A. Bosio; N. Romeo; B. A. Ergashev; A. A. Mavlonov; A. Yu. Usmonov; Sh. A. Esanov

doi:10.3103/S0003701X19010110

Characterization of CdTe and CdS Films for Photoresistors

Authors: Razykov T.M.¹, Bosio A.², Romeo N.², Ergashev B.A.¹, Mavlonov A.A.¹, Usmonov A.Y.¹, Esanov S.A.¹
Affiliations:
1. Physical-Technical Insitute of SPA Physics-Sun, Uzbekistan Academy of Sciences
2. University of Parma
Issue: Vol 55, No 1 (2019)
Pages: 1-4
Section: Direct Conversion of Solar Energy Into Electrical Energy
URL: https://journal-vniispk.ru/0003-701X/article/view/149582
DOI: https://doi.org/10.3103/S0003701X19010110
ID: 149582

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Abstract

Dependences of the evaporation temperature and the growth rate on minimal condensation temperature of polycrystalline CdS films in chemical molecular-beam deposition are discussed. The effect of the evaporation rate and the substrate temperature on the morphology of films has been studied.