电邮这篇文章 Interaction of indium antimonide with saturated sulfur vapor
- 作者: Syrov Y.V.1
-
隶属关系:
- Moscow Technological University (Institute of Fine Chemical Technology)
- 期: 卷 471, 编号 2 (2016)
- 页面: 365-367
- 栏目: Chemistry
- URL: https://journal-vniispk.ru/0012-5008/article/view/153858
- DOI: https://doi.org/10.1134/S0012500816120077
- ID: 153858
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详细
The chemical reaction of single-crystal indium antimonide with saturated elemental sulfur vapor is diffusion-limited and leads to the formation of the triple layer In2S3–(xIn2S3 + (1–x)Sb2S3)–Sb on the surface of the samples. A model explaining the experimental facts is proposed.
作者简介
Yu. Syrov
Moscow Technological University (Institute of Fine Chemical Technology)
编辑信件的主要联系方式.
Email: yvsyrov@yandex.ru
俄罗斯联邦, pr. Vernadskogo 86, Moscow, 119571
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