Features of Pore Nucleation in p-Si during Its Electrochemical Etching

E. N. Abramova; A. M. Khort; A. G. Yakovenko; Yu. V. Syrov; V. N. Tsygankov; E. A. Slipchenko; V. I. Shvets

doi:10.1134/S0012500819070012

Features of Pore Nucleation in p-Si during Its Electrochemical Etching

作者: Abramova E.N.¹, Khort A.M.¹, Yakovenko A.G.¹, Syrov Y.V.¹, Tsygankov V.N.¹, Slipchenko E.A.¹, Shvets V.I.¹
隶属关系:
1. MIREA—Russian Technological University
期: 卷 487, 编号 1 (2019)
页面: 165-167
栏目: Chemistry
URL: https://journal-vniispk.ru/0012-5008/article/view/154458
DOI: https://doi.org/10.1134/S0012500819070012
ID: 154458

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详细

Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.