电邮这篇文章 Pore nucleation and growth in n-type Si during its electrochemical etching
- 作者: Abramova E.N.1, Khort A.M.1, Yakovenko A.G.1, Prokhorov D.I.1, Shvets V.I.1
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隶属关系:
- Institute of Fine Chemical Technologies
- 期: 卷 473, 编号 2 (2017)
- 页面: 67-69
- 栏目: Chemistry
- URL: https://journal-vniispk.ru/0012-5008/article/view/153935
- DOI: https://doi.org/10.1134/S0012500817040012
- ID: 153935
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详细
A mechanism is suggested for pore formation in n-type Si through the stage of nucleation in the most probable places.
作者简介
E. Abramova
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
A. Khort
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
A. Yakovenko
Institute of Fine Chemical Technologies
编辑信件的主要联系方式.
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
D. Prokhorov
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
V. Shvets
Institute of Fine Chemical Technologies
Email: anavenko@yandex.ru
俄罗斯联邦, Moscow, 119571
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