EFFECT OF ANTIFERROMAGNETIC LAYER THICKNESS ON EXCHANGE BIAS AND UNIAXIAL ANISOTROPY IN Co/FeMn HETEROSTRUCTURE
- Authors: Bogdanova T.V.1,2, Fedorov A.S.1,2, Safonov S.S.1, Fedorova A.A.1,2, Shaikhulov T.A.1, Bazrov M.A.3, Nasaraev Z.Z.3, Demidov V.V.1, Kalyabin D.V.1,2, Nikitov S.A.1,2,4
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Affiliations:
- Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
- Moscow Institute of Physics and Technology
- Institute of High Technologies and Advanced Materials of the Far Eastern Federal University
- Saratov State University named after N.G. Chernyshevsky
- Issue: Vol 126, No 9 (2025)
- Pages: 1022-1030
- Section: ЭЛЕКТРИЧЕСКИЕ И МАГНИТНЫЕ СВОЙСТВА
- URL: https://journal-vniispk.ru/0015-3230/article/view/304738
- DOI: https://doi.org/10.7868/S3034621525090075
- ID: 304738
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Abstract
In this work, the influence of the thicknesses of ferromagnetic and antiferromagnetic layers on the magnetic properties of the synthesized Pt/Co/FeMn/Pt structure on a SiO2 silicon substrate was investigated.
Magnetic hysteresis loops, angular dependencies of ferromagnetic resonance spectra, and the expression for the resonance field obtained by solving the Landau–Lifshitz equation for magnetization dynamics were used for experimental and theoretical studies. The coercive field values, as well as the unidirectional and uniaxial anisotropy fields, were determined for antiferromagnetic layer thicknesses of 5, 10, and 15 nm and ferromagnetic layer thicknesses of 5 and 10 nm. Suppression of uniaxial anisotropy and coercive field in the ferromagnetic layer with an increase in unidirectional anisotropy in Pt/Co/FeMn/Pt structures was observed, which is associated with enhanced exchange interaction between AFM and FM layers. The obtained results highlight the potential of using AFM/FM heterostructures in spintronic devices.
About the authors
Tatiana Vladimirovna Bogdanova
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences;Moscow Institute of Physics and Technology
Author for correspondence.
Email: bogdanova.tv@phystech.edu
ORCID iD: 0000-0002-5757-1811
Scopus Author ID: 58169383100
ResearcherId: https://www.researchgate.net/profile/Tatiana-Bogdanova-4
Russian Federation, Moscow, 125009;
Dolgoprudny, 141701
Andrei S. Fedorov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences;Moscow Institute of Physics and Technology
Email: fedorov.andrei@phystech.edu
Russian Federation, Moscow, 125009;
Dolgoprudny, 141701
Sergey S. Safonov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
Email: sergej-safonov-81@bk.ru
Russian Federation, Moscow, 125009
Anna A. Fedorova
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences;Moscow Institute of Physics and Technology
Email: danilova.aa@phystech.edu
Russian Federation, Moscow, 125009;
Dolgoprudny, 141701
Timur A. Shaikhulov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
Email: shcaihulov@hitech.cplire.ru
Russian Federation, Moscow, 125009
Mikhail A. Bazrov
Institute of High Technologies and Advanced Materials of the Far Eastern Federal University
Email: bazrov.ma@dvfu.ru
Russian Federation, Russky Island, Vladivostok, 690922
Zhimba Zh. Nasaraev
Institute of High Technologies and Advanced Materials of the Far Eastern Federal University
Email: nzhimba@mail.ru
Russian Federation, Russky Island, Vladivostok, 690922
Victor V. Demidov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences
Email: demidov@cplire.ru
Russian Federation, Moscow, 125009
Dmitry V. Kalyabin
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences;Moscow Institute of Physics and Technology
Email: dmitry.kalyabin@phystech.edu
Russian Federation, Moscow, 125009;
Dolgoprudny, 141701
Sergey A. Nikitov
Kotelnikov Institute of Radio Engineering and Electronics of the Russian Academy of Sciences;Moscow Institute of Physics and Technology;
Saratov State University named after N.G. Chernyshevsky
Email: nikitov@cplire.ru
Russian Federation, Moscow, 125009;
Dolgoprudny, 141701;
Saratov, 410012
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