Radiation Defects in Aluminum Nitride under Irradiation with Low-Energy C2+ Ions

Abstract

The radiation resistance of ceramic materials based on aluminum nitride have been studied. The irradiation has been performed at a temperature of 300 K using 40-keV C²⁺ ions with a fluence varied from 10¹⁴ to 10¹⁵ ion/cm². The dependences of crystallographic characteristics and strength properties on the ion fluence have been determined on the basis of X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray analysis data. It has been found that the irradiation results in the formation of an impurity phase Al₄C₃ in the surface layer, which leads to an increase in the lattice parameters. This finding indicates the implantation of C²⁺ ions and the formation of the interstitial phase in the structure.