Chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH4)2Cr2O7–HBr solutions

Abstract

We have studied the nature and kinetics of the chemical interaction of InAs, InSb, GaAs, and GaSb crystals with aqueous (NH₄)₂Cr₂O₇–HBr solutions. The dissolution rate of the crystals has been measured as a function of etchant composition, solution stirring rate, and temperature. The results demonstrate that the dissolution rate of the semiconductors is diffusion-limited. We have determined the composition ranges of polishing solutions, optimized their compositions, and found conditions for the dynamic chemical polishing of the semiconductors. Ultrasmooth polished semiconductor surfaces have been obtained, with R_a ≈ 1 nm.