Defect Structure and Photogenerated Carrier Loss Processes in Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) Chalcopyrite Solid Solutions


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Abstract

Cu1 –x(In0.7Ga0.3)Se2 (0 ≤ x ≤ 0.30) copper-deficient solid solutions with the chalcopyrite structure have been synthesized and their unit-cell parameters have been determined as functions of composition. Their 78-K cathodoluminescence spectra show a band centered at 1.13 eV, which is most likely due to Cu2+VCu defect associates. Microwave photoconductivity data demonstrate that the defect associates act as electron traps, considerably reducing the lifetime of photogenerated current carriers.

About the authors

M. V. Gapanovich

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: i.n.odin@mail.ru
Russian Federation, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432

I. N. Odin

Moscow State University

Author for correspondence.
Email: i.n.odin@mail.ru
Russian Federation, Moscow, 119991

E. V. Rabenok

Institute of Problems of Chemical Physics, Russian Academy of Sciences

Email: i.n.odin@mail.ru
Russian Federation, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432

P. S. Orishina

Moscow State University

Email: i.n.odin@mail.ru
Russian Federation, Moscow, 119991

G. F. Novikov

Institute of Problems of Chemical Physics, Russian Academy of Sciences; Moscow State University

Email: i.n.odin@mail.ru
Russian Federation, pr. Akademika Semenova 1, Chernogolovka, Moscow oblast, 142432; Moscow, 119991

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