


Vol 53, No 1 (2017)
- Year: 2017
- Articles: 19
- URL: https://journal-vniispk.ru/0020-1685/issue/view/9596
Article
Silicificated multidimensional reinforced carbon-carbon materials for a wide range of applications
Abstract
Improvement of reinforcement schemes and production processes using different types of carbon matrices and reinforcing fibers makes it possible to change the properties of carbon-carbon composites in a wide range depending on the operating conditions. One of the most promising ways to improve oxidation resistance of the composites is a bulk liquid silicon infiltration, which makes it possible to use them in optical and friction systems, as a ballistic protection of vehicles and aircraft, as cutting and grinding tools, and as a thermal protection of spacecrafts.



Powder systems for calcium phosphate ceramics
Abstract
The present review describes approaches to the preparation of powder formulations for production of calcium phosphate ceramic materials. In order to mold semifinished powder items by means of various methods powder formulations, comprising synthetic powders and fabrication binders, are used.



Impurity composition of high-purity isotopically enriched monosilane and monogermane
Abstract
The impurity composition of 28SiH4, 29SiH4, and 30SiH4 silanes and 72GeH4, 73GeH4, 74GeH4, and 76GeH4 germanes isotopically enriched to above 99.9 at % has been studied by gas chromatography/mass spectrometry using capillary adsorption columns. Impurities have been identified by comparing their mass spectra with NIST data and information available in the literature, and by inferring their structure from fragment ions and retention times. We have identified 53 impurity substances in silanes and 42 in germanes: permanent gases; saturated, unsaturated, halogen-containing, and aromatic C1–C9 hydrocarbons; their homologues; alkyl derivatives of silane and germane; chlorogermane; siloxanes; fluorosiloxanes; sulfur compounds; and dioxane. The silicon- and germanium-containing impurities have been shown to be isotopically enriched, as the major component. The detection limits of the impurities are 5 × 10–8 to 3 × 10–5 vol %, comparing well with the best results in the literature.



Electrical properties of semiconductor CdS studied by adsorption spectroscopy
Abstract
The electrical conductivity of semiconductor CdS films (d ≤ 1 μm) having (0001)S and (0001)Cd polar faces has been measured as a function of temperature at different degrees of adsorption of O2, NO2, and N2O molecules. Adsorption spectroscopy has been used to identify bulk and surface electronic centers in a series of states with a wide range of ionization energies: Et = 0.14–2.21 eV. In contrast to the bulk centers, which have a quasi-continuous energy spectrum characteristic of CdS, the surface adsorption electronic centers have a discrete energy spectrum. The ionization energy of the electronic centers of adsorption origin in CdS + O2, CdS + NO2, and CdS + N2O structures has been measured for the first time at both polarities of the CdS faces and has been shown to depend on the chemistry of the adsorbate and the polarity of the film face.



Growth and optical properties of nanostructured ZnS:Mn films
Abstract
Nanostructured ZnS:Mn films have been grown and their structure, optical properties, and photoluminescence have been studied. The nanostructured ZnS:Mn films have been grown on silicon and glass substrates via hydrochemical deposition from solution. The crystal structure and microstructure of the films have been studied by X-ray diffraction and atomic force microscopy. The band gap of the nanostructured ZnS:Mn films has been determined. The intensity of their photoluminescence bands has been shown to increase with decreasing nanoparticle size.



Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials
Abstract
We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for Ge2Sb2Te5-based thin films.



Effect of melt-spun powder additions on the thermoelectric properties of bismuth and antimony chalcogenides
Abstract
We have studied the thermoelectric properties of p-type Bi0.5Sb1.5Te3 and n-type Bi2Te2.4Se0.6 solid solutions prepared by vacuum hot pressing of mixtures of powders differing in particle size composition. The powders were prepared by mechanically grinding ingots and by ultrarapid melt cooling (melt spinning). Fracture surfaces of samples were examined by scanning electron microscopy. The samples consisted of large, layered particles of the major component (up to hundreds of microns in size) and small flakes (a few to tens of microns in size) of the component prepared by melt spinning. The microstructure of the materials was examined under an optical microscope. On grain boundaries in the p-type materials, we observed telluriumbased eutectic precipitates in the form of a white phase. In some of the n-type samples, the Bi2Te2.4Se0.6 solid solution was found to undergo ordering, resulting in the formation of the ternary compound Bi2Te2Se. The Seebeck coefficient, electrical conductivity, and thermal conductivity of the materials were measured in the temperature range 100–700 K. The addition of 40 wt % powder prepared by melt spinning to hot-pressed p-type samples was shown to have no effect on their thermoelectric figure of merit (ZT)max, which was 1.0 at 350 K. On the addition of 20 wt % powder prepared by melt spinning, we obtained (ZT)max = 1.1 at 550 K in a hot-pressed n-type sample.



Effect of bismuth on parameters of a GaInSbAsP solid solution grown on GaSb substrates
Abstract
Heterophase equilibria in the Ga–In–Sb–As–P–Bi system have been analyzed in terms of a simple solution model. We have calculated the stability limits of GaInAsSbPBi solid solutions in the temperature range ~773–873 K and established thermodynamic limitations on their growth. Based on model analysis results, we have grown a GaInAsSbPBi solid solution on a GaSb substrate via temperature-gradient zone recrystallization. It has been shown that the incorporation of bismuth into a GaInAsSbP solid solution extends its stability region, reduces its band gap, and increases the relative lattice mismatch between the layer and substrate at Bi concentrations above 0.3 at %, but reduces the composition region of lattice-matched GaInAsSbPBi/GaSb heterostructures.



Effect of a magnetron-sputtered MnO2 layer on the thermal oxidation kinetics of InP and the composition and morphology of the resultant films
Abstract
It has been shown in the process of optimization of approaches to effective control over the formation of functional nanofilms on III–V semiconductors that the surface modification of InP with magnetronsputtered MnO2 nanolayers (25 nm thick) results in an oxygen transfer mechanism of the thermal oxidation of the semiconductor. The advantages of this approach are a higher rate of the increase in film thickness in comparison with stimulator-free oxidation, rapid chemical binding of indium, blocking of indium diffusion into the film, and accelerated phosphate formation. Changes in the composition of the films in comparison with those produced by stimulator-free oxidation lead to a considerable improvement in their surface quality (the roughness height does not exceed 20 nm and the average grain size is 55 nm).



Photoluminescence of sodium nitrite under ultraviolet excitation
Abstract
Photoluminescence spectra of ferroelectric sodium nitrite (NaNO2) polycrystals have been measured in the exciton transition region at room temperature and 77 K. The photoluminescence spectra have been shown to contain multiphonon replicas in a broad spectral range: from 390 to 550 nm. Conditions for lasing in sodium nitrite crystals are discussed.



Low-temperature stages in the mechanochemical synthesis of gamma-lithium monoaluminate
Abstract
Low-temperature (<500°C) stages in the synthesis of gamma-lithium monoaluminate through heat treatment of a mechanically activated mixture of aluminum hydroxide and lithium carbonate have been studied by thermogravimetry and differential scanning calorimetry in combination with mass spectrometry. The results demonstrate that heating the mixture to above 80–100°C is accompanied by the release of not only water (resulting from the decomposition of X-ray amorphous aluminum hydroxide) but also carbon dioxide. The carbon dioxide originates from the reaction of the lithium carbonate with the products of X-ray amorphous aluminum hydroxide thermolysis.



Synthesis and thermoluminescence properties of CdB4O7:Tb3+ and CdB4O7:Mn2+
Abstract
Polycrystalline samples of undoped, terbium-doped (CdB4O7:Tb3+), and manganese-doped (CdB4O7:Mn2+) cadmium tetraborate have been prepared by solid-state reactions at 850°C. Using differential scanning calorimetry and X-ray diffraction, we have determined the melting point of CdB4O7 (tm = 976°C) and shown that this compound melts incongruently. The observed monotonic decrease in the orthorhombic cell parameters of the doped materials indicates the formation of substitutional solid solutions (sp. gr. Pbca). The thermoluminescence intensity of the doped materials has been shown to depend on the nature and concentration of the activators and the irradiation time.



Thermodynamic properties of Dy2O3 · 2ZrO2 and Ho2O3 · 2ZrO2 in the range 10–340 K
Abstract
The low-temperature heat capacity of Dy2O3 · 2ZrO2 and Ho2O3 · 2ZrO2 has been determined by adiabatic calorimetry in the temperature range 10–340 K. The results have been used to calculate the entropy, enthalpy increment, and reduced Gibbs energy of the zirconates without taking into account their low-temperature magnetic transformations.



High-temperature heat capacity and thermodynamic properties of Tb2Sn2O7
Abstract
Tb2Sn2O7 has been prepared by solid-state reaction in air at 1473 K over a period of 200 h and its isobaric heat capacity has been studied experimentally in the range 350–1073 K. The Cp(T) data for this compound have no extrema and are well represented by the classic Maier–Kelley equation. The experimental Cp(T) data have been used to evaluate the thermodynamic properties of terbium stannate (pyrochlore structure): enthalpy increment H°(T)–H°(350 K), entropy change S°(T)–S°(350 K), and reduced Gibbs energy Ф°(Т).



Sequence of phase transformations and inhomogeneous magnetic state in nanosized Sr2FeMoO6 – δ
Abstract
We have studied the effect of synthesis conditions on the phase composition, grain size and morphology, degree of superstructural ordering, and magnetic properties of the Sr2FeMoO6–δ double perovskite. The results demonstrate that its magnetic state, dependent on the nonuniformity of grain morphology and the degree of superstructural ordering of the iron and molybdenum cations, correlates with the initial solution pH. Analysis of the sequence of phase transformations during strontium ferromolybdate crystallization in the citrate gel process from a pH 4 starting solution allowed us to propose combined conditions that ensure the preparation of single-phase Sr2FeMoO6–δ powder with an average grain size in the range 50–120 nm and the highest degree of superstructural ordering of the iron and molybdenum cations: P = 88%.



Anisotropy and temperature stability of parameters of Bi3TiNbO9-based high-temperature piezoceramics
Abstract
We have studied the effect of preparation conditions on the structural, dielectric, piezoelectric, and other properties of ceramic samples cut from large, bulk hot-pressed bodies based on modified Bi3TiNbO9 and found conditions favorable for obtaining high piezoelectric parameters that ensure long-term functioning of Bi3TiNbO9-based ceramics at a temperature of 750°C.



Electrical properties of Nb2(1–y)Ta2yO5-based ceramics
Abstract
We have studied the electrical properties of ceramic Nb2(1–y)Ta2yO5 samples, examined the dispersion of the real part of their dielectric permittivity ε′ at room temperature, and assessed their lattice dielectric permittivity ε′∞ The temperature dependences ε′(T) have been obtained at different frequencies, and the dielectric loss tan δ has been evaluated as a function of measuring electric field frequency and temperature. The direct-current conductivity (σdc) of the solid solutions has been determined at room temperature. Using impedance spectroscopy data, we have obtained temperature dependences of σdc for the Nb2(1–y)Ta2yO5 ceramics and evaluated the activation enthalpy for charge transport in these materials in different temperature ranges.



Properties of iron-containing nanohydroxyapatite-based composites
Abstract
The paramagnetic properties of compounds resulting from the synthesis of nanohydroxyapatite in the presence of Fe(III) ions have been studied by electron paramagnetic resonance, Mössbauer spectroscopy, and magnetochemistry. Based on the obtained results on the mechanism of the reaction between an orthophosphoric acid solution and an aqueous calcium hydroxide suspension, we have found conditions for incorporating Fe(III) impurity ions into hydroxyapatite. We have studied samples differing in the sequence in which reagents were mixed and in hydroxyapatite crystallite formation conditions. It has been shown that, in all instances, the composition and properties of the iron-containing phases in the composites depend significantly on both synthesis and heat treatment conditions.



Phase composition, structure, and mechanical properties of arc PVD Mo–Si–Al and Mo–Si–Al–N coatings
Abstract
Using an arc physical vapor deposition process, we have produced nanostructured Mo–Si–Al coatings with a uniform distribution of equiaxed grains 8–12 nm in size and Mo–Si–Al–N coatings with a multilayer structure and a modulation period from 22 to 25 nm. The former coatings consist of MoSi2 and Mo and the latter consist of Mo2N and amorphous Si3N4 and AlN. The hardness of the Mo–Si–Al–N and Mo–Si–Al coatings is 41 and 18 GPa, respectively; they are similar in resistance to elastic deformation; and the Mo–Si–Al–N coating has a considerably higher resistance to plastic deformation. The coatings have roughly identical coefficients of friction (~0.67–0.69 at 20°C and ~0.52–0.56 at 550°C), but the wear resistance of the Mo–Si–Al–N coating is higher by three and two orders of magnitude at 20 and 550°C, respectively. The coatings of the two systems exhibit good adhesion to the substrate and cohesive fracture. Partial wear of the Mo–Si–Al and Mo–Si–Al–N coatings in the course of scratch testing occurs at indentation loads of 80 and 63 N, respectively.


