Investigation of the operation of a bipolar transistor in the mode of a nanosecond opening switch


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Abstract

The results of an experimental study of the operating mode of a high-voltage bipolar transistor are presented. This mode provides an abrupt (nanosecond-duration) recovery of the blocking ability of the collector in a common-base circuit and the formation of high-voltage pulses with a nanosecond rise time.

About the authors

I. V. Grekhov

Ioffe Physical–Technical Institute

Author for correspondence.
Email: grekhov@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021

A. V. Rozhkov

Ioffe Physical–Technical Institute

Email: grekhov@mail.ioffe.ru
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021

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