A silicon sublimation source for molecular-beam epitaxy

Abstract

A sublimation source for molecular-beam epitaxy of silicon layers with a rectangular wafer of doped Si is described. The wafer is attached to springing molybdenum clamps with a smaller width of the contact pad than the wafer width, thus providing the possibility of the evaporation of Si atoms with a high flux density. The criteria for choosing the geometry of the contact pads, on which the silicon wafer–source is fixed, are presented.