Features of the Mocvd Formation of MgO−RuO2 Electron-Emitting Film Structures

Abstract

Thin-film structures based on magnesium and ruthenium oxides are obtained by metal-organic chemical vapor deposition (MOCVD) on flat silicon substrates from volatile bis-(dipivaloylmethanato)(N, N, N’,N’-tetramethylethylenediamine)magnesium(II) and tris-(acetylacetonato)ruthenium(III) complexes in the presence of oxygen. The samples are studied by SEM, EDS, powder XRD, and differential dissolution; their emission characteristics are also measured. The features of the phase formation and the microstructure in the films formed are shown and different forms of magnesium and ruthenium oxides, including nonstoichiometric ones, are found. The MOCVD experimental parameters to form composite structures with high coefficients of electron-induced secondary electron emission (up to 7.2) are determined. These materials can be used as efficient emitting coatings in modern 3D electron multipliers.