EPR study of germanium-vacancy defects in diamonds

Аннотация

Diamonds synthesized in the Mg_0.9–Ge_0.1–C system at high pressure-high temperature (HPHT) conditions are investigated by the EPR and luminescence methods. A new GeV paramagnetic center with the spin S = 1 and D_3d symmetry is detected in the EPR spectra of the Ge-doped samples, along with the impurity nitrogen (Р1) and silicon-vacancy defect KUL1 (SiV⁰) centers. The investigation demonstrates that this new center has a double semi-vacancy structure with the germanium atom in the center. The studied GeV center is in a neutral charge state and is assigned to the 602 nm system in the photoluminescence spectra.