Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

Abstract

This article presents a brief review and original studies of the elastic-plastic properties of nanoscale and microscale thin films on substrates. Studies are conducted on the example of wide gap semiconductor films, which are extremely important for modern micro-and-optoelectronics, such as: gallium nitride, silicon carbide and gallium oxide grown on silicon substrates. The focus is on the effect of film nanoscale on methods for analyzing experimental nanoindentation results. In particular, methods for the analysis of two-layer nanoscale films, as well as films of anisotropic materials, are discussed. The dynamics of elastic stresses in the indenter area are analyzed by the Raman maps. The main methods for modeling the elastoplastic properties of films by quantum chemistry and molecular dynamics are considered.